热电子应力下nMOSFET中复合电流的退化特性研究  

Degradation of Recombination Current under the Hot Electron Stress in nMOSFET's

作　　者：陈海峰 

机构地区：[1]西安邮电大学电子工程学院,西安710121

出　　处：《固体电子学研究与进展》2017年第5期312-315,338,共5页Research & Progress of SSE

基　　金：国家自然科学研究基金资助项目(61306131)

摘　　要：复合电流曲线面积S这一参数被引入来研究了热电子应力下n型金属氧化物半导体场效应晶体管(nMOSFET)中复合电流的退化特性。电子注入应力中,复合电流随着热电子应力后峰值变小并且曲线展宽。基于对S变化的分析,发现这种变化归因于热电子应力过程中,部分热电子占据了部分界面陷阱使得有效的界面态浓度Nit变小,同时另一部分注入进栅漏交叠区的氧化层中而使得有效的漏端电压UD增加。进一步发现,S的变化量△S与应力时间在双对数坐标下成线性关系:△S∝t^a,其中a=0.6。The degradation of recombination current IGM6 under the hot electron stress was investigated in nMOSFET＇s by studying the area （S） of the IGM6 curve. Under the hot electron stress, the peak of IGMG curve decreased and the curve expanded. Based on the analysis of S, it is found that the change of IGMR results from the facts that some hot electrons generated by the stress reduced the effective density of interface traps Nit and that other hot electrons injected into the oxide at drain-to-gate overlap increases the effective drain bias UD. Furthermore, the variation of S has the linear relationship with the stress time： △S ∝ta in which a=0.6.

关 键 词：界面陷阱 复合电流 热电子应力 n型金属氧化物半导体场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]