基于Nakagawa极限理论的硅基IGBT通态特性研究  

Investigation on Si IGBT Forward Characteristics Considering Nakagawa-limit Theory

作　　者：张如亮[1] 王彩琳[1] 

机构地区：[1]西安理工大学电子工程系,西安710048

出　　处：《固体电子学研究与进展》2017年第5期345-349,360,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(51477137);西安理工大学博士启动金资助项目(211317);西安市产学研协同创新计划资助项目(CXY1501)

摘　　要：Nakagawa-limit是基于硅基极窄台面间距IGBT提出的理论假设,发射极区只有电子电流流过,空穴电流只对电导调制有贡献。分别引入载流子存储层和P-ring结构,通过数值模拟分析方法,研究了改进结构对通态压降的降低情况;引入虚拟元胞结构,更进一步降低通态压降。模拟结果表明,4.5kV器件通态比电阻在电流密度为500A/cm^2时可降低至27.2mΩ·cm^2,介于传统SiIGBT和Nakagawa理论预测值的中间。An assumption theory proposed by Nakagawa, aiming to pursuit to the Si IGBT characteristics limit, is that in extremely narrow Mesa width, only electron current flows to emitter side, and hole current contributes to conductance modulation. The progress of different partially narrow mesa structures based on Nakagawa-limit, and the improvement of IGBT conduction performance was investigated. The reduction of the on-state voltage drop by introducing the carrier storage layer and P-ring into 4.5 kV PNM IGBT was simulated by TCAD. Long lateral p float area and Dummy cell technology were both adopted to get more improvement in onstate characteristics of IGBT. Simulated specific on resistance at 500 A/cm2 reduces to 27.2 mΩ · cm2 , between the typical IGBT limit and Nakagawa-limit.

关 键 词：绝缘栅双极晶体管 注入增强 Nakagawa-limit 部分窄Mesa 通态比电阻 

分 类 号：TN323.4[电子电信—物理电子学] TN386.1