高压大电流单片DC/DC的抗总剂量加固技术  

Total dose radiation hardness technology of high-voltage high-current monolithic DC-DC converter

作　　者：胡永贵[1,2] 王健安[1,2] 魏亚峰[1,2] 张振宇[2] 孙毛毛 

机构地区：[1]中国电子科技集团公司模拟集成电路国家级重点实验室,重庆400060 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《太赫兹科学与电子信息学报》2017年第6期1060-1065,共6页Journal of Terahertz Science and Electronic Information Technology

摘　　要：采用电流模、电压模双环控制结构,结合峰值电流采样等关键技术,实现了一款功率集成的单片DC/DC变换器。设计的峰值电流采样、斜率补偿大大提高了系统的稳定性,提高了系统的快速瞬态响应能力;针对高压低压差线性稳压器(LDO)、电流采样等高压模块电路,通过采样齐纳二极管、高压NJFET代替高压厚栅MOSFET等的设计方法,从总体上降低高压器件的数量,在基于30 V BCD(Bipolar-CMOS-DMOS)工艺上,结合特殊器件的版图设计方法,制作出一款输入电压5.5~17 V,电压调整率小于10 mV,电流调整率小于25 mV,输出电流大于5 A,系统静态电流小于25 mA,最高工作效率为93%的高效单片DC/DC,其抗总剂量能力大于100 krad(Si)。A power-integrated monolithic DC-DC converter is realized by using current-mode, voltage-mode dual-loop control architecture as well as the key technologies such as peak current sampling. Designed peak current sampling and slope compensation improve the system stability greatly, and improve the fast transient response capability of system. Aiming at the high-voltage module circuits such as high-voltage Low Dropout regulator（LDO）, current sampling, the DC-DC converter increases high-voltage LDO radiation-hardening capability by using Zener diode, by replacing high-voltage thick-gate MOSFET with N-channel Junction Field-Effect Transistor（NJFET）, and by reducing the number of high-voltage devices on the whole. The high-efficiency monolithic converter with input voltage of 5.5-17 V, voltage regulation of less than 10 mV, current regulation of less than 25 mV, output current of greater than 5 A, system quiescent current of less than 25 mA, maximum operating efficiency of 93% and total dose of more than 1×105 rad（Si） is developed in 30 V BCD（Bipolar-CMOS-DMOS）-based process technology, compared with radiation-hardening layout for special devices.

关 键 词：单片DC/DC 峰值电流采样 斜率补偿 总剂量 

分 类 号：TM46[电气工程—电器]