适用于flash编程的双电荷泵电路系统设计  

Design of Charge Pump System Applied in Flash Memory Operation

作　　者：李珂[1] 高宏[1] 徐丽丽[1] 

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《固体电子学研究与进展》2017年第4期284-287,共4页Research & Progress of SSE

摘　　要：设计了一款应用于flash存储单元编程操作的高压双电荷泵电路系统,可同时提供正负高压。该系统基于传统的Dickson结构,采用提高传输管栅压的方法进行改进设计,降低电压传输损失,提高工作效率。同时,通过使能时序的控制,保证电路系统的稳定性;通过基准与分压电路的应用,保证输出电压的高精确度。仿真结果显示,该电路输出电压精度高、纹波小、效率高,已实际应用于芯片设计中,采用SMIC 0.18μm flash工艺流片,输出正负高压稳定,达到设计要求,性能良好。A new charge pump system applied in flash memory operation was presented, which could offer both positive and negative high voltage at the same time. Based on Dickson charge pump structure, the new circuitry is modified by raising the gate voltage of switch tran- sistors, so as to reduce voltage loss and improve efficiency. Moreover, the controlling of timing sequence ensures the stability of circuitry; the utility of the reference and dividing voltage circuit ensures the high precision of the output voltage. It is shown in simulation that the output voltage of the new charge pump system has the advantages of high accuracy, small voltage ripple and high efficiency. Taping out with SMIC 0. 18 μm flash technology, this circuit has been realized with high performance which meet the design requirements.

关 键 词：电荷泵 Dickson 比较器 基准 

分 类 号：TN433[电子电信—微电子学与固体电子学]