CMOS荧光波长检测芯片的设计与仿真  

Design and Simulation of CMOS Fluorescence Chip for Wavelength Detection

作　　者：施朝霞[1] 吴柯柯 李如春[1] 曹全君[1] 

机构地区：[1]浙江工业大学信息学院,杭州310023

出　　处：《半导体光电》2017年第6期784-787,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61306090);浙江省自然科学基金项目(LY17F040004)

摘　　要：双结深光电二极管包括一深一浅两个光电二极管,深、浅pn结光电二极管的光电流比值I_2/I_1随入射光波长单调增加。文章基于0.5μm CMOS工艺对双结深光电二极管深、浅结光电流进行了数学建模和Matlab仿真。设计了片上信号处理电路,将双结深光电二极管深、浅结光电流比值转换成电压输出。仿真结果表明,信号处理电路的输出与ln(I_2/I_1)具有良好的线性关系。单片集成的CMOS波长检测芯片可用于未知荧光的波长检测和特异性分析。Double junction photodiode includes one deep and one shallow pn junctions,and the optimal current ratio I_2/I_1 between deep and shallow junctions increases with the raise of the incident wavelength.In this paper,the mathematical modeling and Matlab simulation of the photocurrent for deep and shallow junction diodes are realized based on 0.5μm CMOS technology.The current ratio of deep and shallow junction for double junction photodiode is converted to the voltage by the integrated signal processing circuits.The simulation results show that the output of the signal processing circuits has a good linear relationship with the natural logarithm of ln（I_2/I_1）.The monolithic integrated CMOS wavelength detection chip can be used for the detection and analysis of unknown wavelength.

关 键 词：双结深光电二极管 波长检测芯片 CMOS 仿真 

分 类 号：TN383[电子电信—物理电子学]