一种基于HfO_2材料的RRAM波动性模型  

A Fluctuation Model for RRAMs Based on HfO_2 Material

作　　者：方聪 李力南[1] 张锋[2] 

机构地区：[1]北京交通大学电子信息工程学院,北京100044 [2]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2017年第6期847-850,855,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61474134)

摘　　要：基于HfO_2材料制作了一种具有良好非易失性的阻变存储器(RRAM)。根据ECM导电细丝机制,建立了动态的Verilog-A模型,该模型包含了RRAM的波动特性。对模型进行直流电压扫描验证,与实际器件的电流-电压特性曲线进行拟合。验证结果表明,该模型具备RRAM器件优良的电学特性,波动特性的加入对电路的前期设计具有指导意义。对模型进行脉冲仿真,仿真结果表明高、低阻态之间的鉴别窗口大于100倍,转变时间小于30ns。A RRAM（Resistive Random Access Memory）device based on HfO2 material was fabricated,which showed outstanding nonvolatility.A dynamic Verilog-A model obeyed ECM（ElectroChemical Metallization）conductive filament mechanism was demonstrated.The fluctuation of the conductive filament growth was added to this model.The model was verified by DC voltage scanning.The simulation and experimental data were compared by using the data processing software.Verified results indicated that the proposed model performed a good electrical characteristics of RRAM device.The fluctuation of RRAM model provided a reference for the preliminary design of peripheral circuits.The model was simulated using pulse voltage.With simulation results,the difference between LRS（Low Resistance State）and HRS（High Resistance State）was greater than a hundred-fold,and the transition time was less than 30 ns.

关 键 词：阻变存储器 Verilog-A模型 波动性 

分 类 号：TN402[电子电信—微电子学与固体电子学]