HFCVD金刚石薄膜的热场模拟及实验  

Thermal Field Simulation and Experiment of Diamond Films by HFCVD

作　　者：路一泽 檀柏梅 高宝红 刘宜霖 张礼 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2018年第1期53-58,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2009ZX02308-003);国家自然科学基金资助项目(NSFC61504037);河北省自然科学基金资助项目(E2013202247,F2015202267);天津市自然科学基金资助项目(16JCYBJC16100);博士后科研项目择优资助项目(B2015003010)

摘　　要：基体温度是影响金刚石薄膜生长质量的重要因素之一。基于有限元分析法,通过ANSYS CFX软件对基体温度场进行模拟仿真,得到基体表面温度场的分布,并分别讨论了热丝-基体距离、热丝间距、水冷系数等参数对系统温度场均匀性和一致性的影响。经仿真优化后得到的参数值分别为热丝-基体距离10 mm、热丝间距15 mm、水冷系数1 000 W/（m^2·K）。在此优化工艺的基础上进行热丝化学气相沉积（HFCVD）金刚石薄膜的实验,并采用扫描电子显微镜（SEM）和X射线衍射仪（XRD）对金刚石薄膜表面特征进行检测。结果表明：利用仿真优化后的薄膜生长参数,可以在金刚石薄膜生长区域得到比较均匀的多晶金刚石薄膜。Substrate temperature is one of the important factors affecting the growth quality of diamond films. The substrate temperature field was simulated by the ANSYS CFX software,and the temperature field distribution on the surface of substrates was obtained based on the finite element analysis method. The influences of parameters such as the distance between the hot filament and the substrate,hot filament spacing and the water cooling coefficient on the uniformity and consistency of the system temperature field were discussed respectively. The optimized parameters obtained by simulation were 10 mm of distance between the hot filament and the substrate, 15 mm of hot filament spacing and 1 000 W/（ m^2·K） of the water cooling coefficient. The experiment of the hot filament chemical vapor deposition（ HFCVD） of the diamond film was carried out based on the optimized process,and the surface characteristics of the diamond film were detected by scanning electron microscope（ SEM） and X-ray diffractometer（ XRD）. The results show that the uniform polycrystalline diamond films can be obtained in the diamond film growing region by using the simulation optimized film growth parameters.

关 键 词：热丝化学气相沉积(HFCVD) 金刚石薄膜 温度场 有限元分析 均匀性 

分 类 号：TN304.055[电子电信—物理电子学] TN304.18