Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells  

作　　者：郑卫民 丛伟艳 李素梅 王爱芳 李斌 黄海北 

机构地区：[1]School of Space Science and Physics, Shandong University (Weihai) [2]School of Information Engineering, Shandong University (Weihai) [3]Shanghai Institute of Technical Physics, Chinese Academy of Sciences [4]School of Chemistry, the University of Melbourne

出　　处：《Chinese Physics B》2018年第1期514-519,共6页中国物理B（英文版）

基　　金：Project supported by Shandong Province Natural Science Foundation,China(Grant No.ZR2017MF018);the National Natural Science Foundation of China(Grant No.61675223)

摘　　要：Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical （LO） phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.Three samples of GaAs/A1As multiple-quantum wells with different quantum well widths and tS-doped with Be ac- ceptors at the well center were grown on （100） GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4-50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical （LO） phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.

关 键 词：coupled mode Raman spectrum δ-doped GaAs/A1As multiple quantum wells 

分 类 号：O4[理学—物理]