C波段高效率GaN HEMT功率放大器  

C-band High-efficiency GaN HEMT Power Amplifier

作　　者：孙嘉庆 郑惟彬[1,2] 钱峰 

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2017年第6期379-383,共5页Research & Progress of SSE

摘　　要：通过负载牵引测试验证了源端二次谐波对器件效率的影响,同时又进一步验证了输出谐波匹配对放大器的作用。基于此结果,研制了两款采用0.25μm工艺的GaN功率MMIC 4.0~5.6GHz高效率放大器芯片,芯片采用二级放大的结构。第一款输出级只考虑基波的匹配;第二款输出级匹配电路兼顾二次和三次谐波进行匹配。两款的末前级均考虑二次谐波的匹配,同时级间优化推动比,进一步提高效率。输入级和级间匹配电路采用有耗匹配,提高稳定性。芯片在4.0~5.6 GHz范围内漏压28 V,脉宽100μs,占空比10%条件下输出功率41dBm,功率增益20~21dB,功率附加效率分别在48%和45%以上。芯片面积3.9mm×3.3mm。The input second harmonic termination and output harmonic termination have been proved to be effective for device efficiency by using source/load pull measurement.Two 4.0-5.6 GHz high efficiency power amplifiers was developed utilizing a 0.25 μm gallium nitride HEMT technology.The two MMICs was designed using 2-stage topology.Fundamental termination is only taken into account in the output stage of the first MMIC.The second and third harmonic matching is used in the output stage of the second MMIC to improve the efficiency.And the second termination at the gate of the middle stage is used in both MMICs to improve the efficiency.Loss matching is used in both input and middle stage to improve stability.At 4.0-5.6 GHz,the MMICs show a output power of 41 dBm with an associated gain of 20-21 dB and a power added efficiency over 48% and 45% respectively at drain voltage of 28 Vand input pulse width of 100 with a duty cycle of 10%.The chip size is 3.9 mm×3.3 mm.

关 键 词：功率放大器 谐波匹配 C波段 源/负载牵引 高效率 

分 类 号：TN722.75[电子电信—电路与系统] TN492