基于等效电路参数提取的硅光电二极管激光损伤机理分析  

Analysis of laser-induced damage mechanism in Si photodiode based on parameter extraction of equivalent circuit

作　　者：师宇斌[1] 张检民[1] 张震[1] 林新伟[1] 程德艳[1] 窦鹏程 

机构地区：[1]西北核技术研究所激光与物质相互作用国家重点实验室,陕西西安710024

出　　处：《红外与激光工程》2018年第1期139-144,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(11405132);西北核技术研究所长线预研课题(12111502)

摘　　要：通过硅光电二极管激光辐照效应实验获取了辐照前后器件的I-V特性曲线,利用粒子群优化算法对二极管的等效电路参数进行提取,考察受损前后等效参数的变化规律。认为光电二极管在激光辐照受损后,其反向饱和电流会减小,等效串联电阻会增大,等效并联电阻会减小。随后,基于半导体物理理论,对这些参数变化的内在因素进行了定性分析。认为反向饱和电流减小是由掺杂离子浓度减小造成的,串联电阻增大是因掺杂离子浓度以及载流子寿命减小共同引起的,并联电阻减小则是由半导体表面及内部的缺陷引起的。Combined with particle swarm optimization （PSO） algorithm, the parameter of photodiode was extracted from I-V characteristics curve based on the equivalent circuit which was obtained before and after irradiation on Si photodiode. Then the experimental law of equivalent parameter before and after being damaged was acquired. When the photodiode was damaged, the reverse saturation current was decreased and the series resistance was increased, and the shunt resistance was decreased. The damage mechanism was given qualitatively based on semiconductor physics theory. The decrease of the reverse saturation current was on account of decrease in doping concentration. The increase of series resistance was due to the decrease in doping concentration and carrier lifetime. The decrease of the shunt resistance was caused by the defects in the surface and internal of semiconductor.

关 键 词：二极管等效电路 激光辐照效应 粒子群优化算法 

分 类 号：TN249[电子电信—物理电子学]