808 nm连续输出13.6 W单芯片大功率激光器  

808nm Single Emitter High Power Laser with 13.6W

作　　者：李沛旭 殷方军 张成山 开北超 孙素娟 江建民 夏伟 徐现刚 

机构地区：[1]山东华光光电子股份有限公司,山东济南250101 [2]济南大学物理科学与技术学院,山东济南250022 [3]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《中国激光》2018年第1期75-78,共4页Chinese Journal of Lasers

基　　金：国家重点研发计划(2016YFB0401802)

摘　　要：通过对大功率激光器腔面光学灾变损伤的研究,分析了激光器腔面镀膜的损伤机理。为了提高激光器的输出功率,采用TiO_2替换Si作为高折射率材料,建立非标准膜系降低电场强度,同时优化膜层材料的粗糙度,并采用离子源进行清洗和助镀,有效提高了激光器的腔面光学灾变损伤阈值。结果表明,所制作的808nm激光器,最大连续输出功率达到13.6 W。The catastrophic optical damage of the high power laser is studied, and the damage mechanism of the laser facet coating is analyzed. In order to increase the output power of the laser, the TiO2 is used to replace the Si as the high refractive index materials, the nonstandard film is set up to reduce the intensity of electric field. Meanwhile, the roughness of the film materials is optimized, and the ion source is used to clean and flux. The threshold of the catastrophic optical damage is effectively improved. The results show that the proposed laser has a maximum continuous output power of 13.6 W.

关 键 词：激光器 光学灾变损伤 腔面镀膜 TIO2 808 nm波长 

分 类 号：TN2[电子电信—物理电子学]