氮δ掺杂Cu_2O薄膜的生长及物性研究  

Research on Growth and Physical Properties of N δ-doped Cu_2O Films

作　　者：李微 潘景薪 王登魁 方铉 房丹 王新伟 唐吉龙 王晓华 孙秀平[2] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学理学院,吉林长春130012

出　　处：《中国激光》2018年第1期135-139,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(61404009);吉林省科技发展计划(20170520118JH);长春理工大学科技创新基金(XJJLG-2016-14)

摘　　要：采用等离子体增强原子层沉积(PEALD)技术,以NH3为掺杂源,制备了氮δ掺杂Cu_2O薄膜,研究了N掺杂对Cu_2O薄膜表面形貌、光学及电学性质的影响。研究结果表明,N掺杂引起了晶格畸变,Cu_2O薄膜的表面粗糙度增大;掺杂后Cu_2O薄膜的带隙宽度从2.70eV增加到3.20eV,吸收边变得陡峭;掺杂后载流子浓度为6.32×1019 cm^(-3),相比于未掺杂样品(5.77×1018 cm^(-3))的提升了一个数量级。By the plasma enhanced atomic layer deposition （PEALD） technique, the N δ-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N δ-doped Cu2O thin films increases. The bandgap width of the N δ-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32×10^19 cm^-3, enhanced by one order of magnitude comparing with that of the un-doped samples （5.77×10^18 cm^-3）.

关 键 词：材料 等离子体增强原子层沉积 氮δ掺杂 Cu2O薄膜 NH3掺杂源 

分 类 号：TN2[电子电信—物理电子学]