基于耦合忆容模拟器的双非门振荡电路  

Two-astable-oscillator Circuit Based on Coupling Memcapacitor Simulator

作　　者：周知 朱旺 朱虹 于东升 

机构地区：[1]中国矿业大学电气与动力工程学院,徐州221116

出　　处：《电源学报》2018年第1期171-177,共7页Journal of Power Supply

基　　金：国家自然科学青年基金资助项目(51307174)~~

摘　　要：通过在多谐振荡电路中引入忆容模拟器,提出一种磁通控制型耦合双忆容器模拟电路,并从理论上推导出其忆容值与磁通之间的数学关系。在此基础上,进行了基于耦合忆容模拟器的双非门多谐振荡器及其动态特性的研究。因耦合作用的影响,此电路呈现出有别于传统双非门振荡器的输出特性,其可用于电力电子变换器的驱动和信号测试。为了证明耦合忆容模拟器与基于其的双非门振荡电路的可行性,搭建硬件实验电路并进行了测试,实验结果与仿真结果保持一致,证实了理论分析的正确性。Through the introduction of a memcapacitor simulator to a two-astable-oscillator circuit, a flux-controlled coupling two-memcapacitor simulation circuit is proposed, and the mathematical relationship between the memcapaci- tance value and flux is analyzed theoretically. On this basis, a double-NOT-gate two-astable-oscillator circuit based on coupling memcapacitor simulator and its dynamic characteristics are studied. Due to the coupling effect, the output char-acteristics of this circuit is different from those of the traditional double-NOT-gate oscillator, thus it can be used in the driving and signal testing of a power electronic converter. To verify the feasibility of the coupling memcapacitor simulator and the related two-astable-oscillator circuit, an experimental circuit was built using hardware and tested further. Experi-mental results were consistent with the simulation, which verified the theoretical analysis.

关 键 词：耦合行为 忆容特性 忆容模拟器 双非门振荡器 

分 类 号：TM132[电气工程—电工理论与新技术]