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机构地区:[1]沈阳工业大学信息科学与工程学院,沈阳110870
出 处:《微处理机》2018年第1期1-4,共4页Microprocessors
摘 要:在开关电源或逆变电路中,快速软恢复二极管得到大量的使用。传统的PIN二极管存在着大反向恢复峰值电流和硬恢复特性的问题,因此具有低阳极注入的二极管结构被提出,例如PN结和肖特基接触相结合的混合PIN肖特基二极管MPS。以1200V MPS二极管为例,对其正向导通特性、反向阻断特性和反向恢复特性进行了研究。通过对MPS二极管的元胞面积和肖特基区面积的优化,实现了MPS二极管的正向导通电压和反向恢复存储电荷良好的折衷,与肖特基二极管相比,MPS二极管兼有较小的反向漏电流。通过对MPS二极管结构参数进行优化,使其具有更好的快速软恢复特性。Fast soft recovery diodes are widely used in switching power supply or inverter circuits.Conventional PIN diodes suffer from the problem of large reverse recovery peak current and hard recoverycharacteristics, so diode structures with low anode injection, such as Mixed PIN Schottky (MPS) diodescombined with PN junctions and Schottky contacts, have been proposed. Taking 1200V MPS diode as anexample, the forward conduction characteristic, reverse blocking characteristic and reverse recovery char-acteristic were studied. By optimizing the cell area and Schottky region area of MPS diode, the goodtrade-off between forward conduction voltage and reverse recovery of storage charge of MPS diode is re-alized, and compared with Schottky diode, MPS diode has smaller reverse leakage current as well. By op-timizing the structural parameters of MPS diode, it has better fast soft recovery characteristics.
关 键 词:MPS二极管 正向导通特性 反向阻断特性 反向恢复特性 折衷曲线
分 类 号:TN312.4[电子电信—物理电子学]
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