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作 者:牛森 高翔[1,2] 刘璐 袁渊[1,2] 郭欣 陈畅 杨书宁
机构地区:[1]微光夜视技术重点实验室,陕西西安710065 [2]北方夜视科技集团有限公司,云南昆明650223
出 处:《红外技术》2018年第2期189-192,共4页Infrared Technology
摘 要:为了探究Cs、O激活电流对透射式GaAsP光阴极光谱响应特性的影响,通过光谱响应测试仪测试不同Cs、O电流激活后的透射式GaAsP光阴极光谱响应曲线,结果表明,随着铯氧蒸发电流比的减小,GaAsP光阴极光谱曲线的形状会发生一定的改变,长波响应能力逐渐降低、短波响应能力逐渐提高。利用双偶极层模型理论,分析认为铯氧蒸发电流比的改变影响了GaAsP光阴极表面势垒的形状,使得不同激发能量的光电子通过隧道效应穿越表面势垒宽度发生变化,从而影响GaAsP光阴极光谱响应特性。根据此现象对进一步提高GaAsP光阴极在530 nm特征波长的量子效率具有积极的意义。To explore the effect of cesium and oxygen activation current on the response characteristics of transmission-mode GaAsP photocathode spectrum, the spectral response of a transmission-mode GaAsP photocathode after cesium and oxygen current activation was measured using a spectral response measuring instrument. The results show that with the decreased ratio of cesium and oxygen evaporation current, the shape of the GaAsP photocathode spectral curves changes: the spectral response of the long wave reduces gradually, whereas the spectral response of the short wave improves gradually. According to the double dipole layer theory, the change in the deposition rate of cesium and oxygen affects the shape of the surface barrier of the GaAsP photocathode, which changes the width of the surface barrier when photoelectrons of different excitation energies pass through the tunnel, thereby affecting the GaAsP photocathode spectral response. This phenomenon is significant for the improvement of the quantum efficiency of GaAsP photocathodes at 530 nm wavelength.
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