Cu_2O掺杂对钛酸钡基PTC陶瓷的影响  

作　　者：周江[1,2] 

机构地区：[1]广西科技大学理学院,广西柳州545006 [2]广西大学物理科学与工程技术学院,广西南宁530004

出　　处：《科技创新与应用》2018年第6期178-179,共2页Technology Innovation and Application

基　　金：广西自然科学基金项目(编号:2017GXNSFAA198315);柳州市科技计划项目(编号:2016B040202);广西科技大学科学基金项目(编号:校科自174507;140709)

摘　　要：为研究Cu_2O掺杂对Y半导化的BaTiO_3基PTC陶瓷的影响,用固相反应法制备了以0.3%mol Y_2O_3为施主掺杂物、不同含量的Cu_2O为受主掺杂物的钛酸钡基PTC陶瓷系列样品。测量了样品电阻率与温度变化之间的关系,用快-快符合寿命谱仪测量了样品的正电子湮没寿命谱。结果表明:掺杂Cu_2O可以显著提高样品的升阻比(ρmax/ρmin),随着Cu_2O掺杂量的增加,室温电阻率逐渐增大,样品的升阻比先增大后减小,掺杂0.01%mol Cu_2O的样品升阻比最大,性能最好。随着Cu_2O掺杂量的增大,少量Cu离子会进入晶粒内部,但更多的Cu离子会在晶界聚集,使晶界缺陷态增多,晶粒细化。In order to study the effect of Cu2O doping on Y semiconducting BaTiO3 based PTC ceramics. Barium titanate basedPTC ceramics with 0.3%molY2O3 as donor and Cu2O with different content as acceptor were prepared by solid state reaction. The relationship between resistivity and temperature was measured. The positron annihilation lifetime spectra of the samples were measuredby a fast fast coincidence lifetime spectrometer. The results show that doped Cu2O can significantly increase the rise-to-drag ratio（籽max/籽min） ,and the resistivity at room temperature increases with the increase of the doping amount of Cu2O. The rise-to-drag ratio of the samples first increased and then decreased. The rise-to-drag ratio of the samples doped with 0.01mol/ Cu2O was thelargest and the performance was the best. With the increase of Cu2O doping amount,a small amount of Cu ions will enter the graininterior,but more Cu ions will gather at grain boundaries,resulting in the increase of grain boundary defect states and grain refinement.

关 键 词：Cu2O掺杂 PTC 升阻比 

分 类 号：TN373[电子电信—物理电子学]