一种用于高精度DAC的实用型CMOS带隙基准源  

A CMOS bandgap reference for high precision DACs

作　　者：奉伟 施娟[1] 翟江辉[1] 郭栋 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《电子技术应用》2018年第2期16-19,共4页Application of Electronic Technique

基　　金：国家自然科学基金项目(11362005)

摘　　要：为了满足一种高速、高精度DAC的设计要求。通过带隙基准电压源的基本设计原理,设计了一种实用型的基准电压源,获得了一个快速启动、高稳定性的电压基准电路。基于40 nm的CMOS标准工艺并用cadence软件进行了后仿真,仿真结果表明在室温下,电源电压为2.5 V时输出基准电压为1.184 V;启动时间为0.5μs;消耗功耗为0.185 5 mW;在-15℃~75℃的温度范围内温度漂移系数为8.7×10^(-5)/℃;在低频时电源电压抑制比为-85 dB;绘制版图的面积大小仅为154.799μm×48.656μm。In order to meet a high-speed, high-precision DAC design requirements. A practical reference voltage source is de- signed by the basic design principle of the bandgap reference voltage source, and a voltage reference circuit with fast start and high stability is obtained. The post-layout-simulation results show that the output voltage is 1.184 V at 0.5 V when the power supply voltage is 2.5 V, the starting time is 0.5 μs, and the output voltage is 0.185 5 mW. In the temperature range of -15 ℃- 75℃ temperature drift coefficient is 8.7×10-5/℃. At low frequency when the power supply voltage suppression ratio of -85 dB; drawing the size of the area is only 154.799μm×48.656 μm.

关 键 词：DA转换器 基准电压源 温度系数 电压抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]