55纳米CMOS图像传感器栅极多晶硅工艺研究  

The Study of Poly Gate in 55nm CMOS Image Sensor

作　　者：陈昊瑜 田志 

机构地区：[1]上海华力微电子有限公司,上海201203

出　　处：《中国集成电路》2017年第12期64-69,共6页China lntegrated Circuit

摘　　要：随着市场对于摄像设备的更多和更高性能的需求,基于互补金属氧化物晶体管的图像传感器CIS(CMOS image sensor)由于其优异的性能正逐步取代原有的电荷耦合器件(CCD)。华力55CIS平台将55LP(55纳米低功耗)工艺的逻辑区和客户的像素区结合起来,通过引入ONO(氧化硅/氮化硅/氧化硅)的硬掩模工艺,实现对像素区对高能量注入的阻挡和优化的多晶硅形貌。在后续的工艺中,多晶硅的再氧化,逻辑区输入/输出(IO)器件轻掺杂漏注入和硬掩膜的去除顺序会引起对核心器件区域,输入/输出器件(IO33)区域和像素区的硅表面的损伤,需要找出优化的工艺方案来确保器件性能和可靠性。本文通过对多晶硅的再氧化,逻辑区IO器件轻掺杂漏注入和硬掩膜的去除顺序的研究,找出了优化的工艺顺序,并对器件性能,可靠性进行评估。As the requirement of market and better performance of image sensor, basing on complementary metaloxide-ailicon image sensor with outstanding performance supersede the conventional charge-couple-device gradually. HLMC 55nm CMOS image sensor based on proven technique 55nm logic platform, and combines with the pixel design of customer, by means of optimizing the old process, especially on the poly gate of the logic and pixel region. It was introducing the hard mask consisting of oxide-nitride-oxide that blocks the high energy implant and gives the friendly morphology of poly gate. But in the following process, poly gate re-oxidation, IONLDD implant and the se- quence of removal of hard mask on poly can induce damage on core device, IO33 device and pixel region. What was the best way to balance the device reliability and performance？ This paper discussed the poly gate re-oxidation, IONLDD implant and sequence of removal of hard mask in poly, and proposed the compatible and optimized process, and evaluated the device performance and reliability.

关 键 词：CMOS图像传感器(CIS) 多晶硅硬掩膜 多晶硅再氧化 输入输出N型3.3V器件(NIO33) 输入输出N型器件的轻掺杂漏(IONLDD) 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]