不同粒径磨料对蓝宝石晶片及其抛光过程的影响  

Effect of Particle Size of Abrasive on Sapphire Wafer Polishing Process

作　　者：张丽萍 苗如林 沈正皓 郭立 陈庆敏 林海[1] 李春[1] 李建勳 曾繁明[1] 刘景和[1] 

机构地区：[1]长春理工大学,光电功能材料教育部工程研究中心,长春130022 [2]南京京晶光电科技有限公司,南京211100

出　　处：《硅酸盐学报》2018年第1期59-63,共5页Journal of The Chinese Ceramic Society

基　　金：吉林省科技厅创新项目(20160414043GH)资助

摘　　要：采用不同粒径的W28和W7碳化硼（B4C）磨料对蓝宝石晶片进行研磨和化学机械抛光。研究了不同粒径的B4C磨料对蓝宝石晶片研磨和化学机械抛光后的移除率、粗糙度、平坦度、弯曲度、翘曲度等参数的影响。结果表明：W28和W7的磨料有不同的研磨和抛光性能,在相同的加工条件下,使用W28的B4C磨料,移除速率较快,但研磨所得蓝宝石晶片的损伤层较深,单面抛光20μm不足以去除其损伤层,抛光后表面划痕较多,粗糙度较大（Ra=1.319 nm,Rt=2.584 nm）,表面有明显起伏;而W7磨料的移除速率慢,研磨时间长,在单面抛光移除20μm后其损伤层全部移除,抛光所得蓝宝石晶片平坦度略佳,抛光表面平整,粗糙度较小（Ra=0.194 nm,Rt=0.361 nm）,无明显起伏,表面质量相对较高,适于精修平坦度。The sapphire wafer was grinded and polished by different particle size of the B4C abrasive including W28 and W7.The influence of B4C abrasive with different particle size on the removal rate,roughness,flatness,bending degree and warpage of sapphire wafer were investigated.The results show that the abrasives of W28 and W7 have different polishing performances.Under the same processing conditions,the removal rate of B4C is higher than that of W28.However,the roughness of the sapphire wafer with W28 is greater and the grinding damage layer is deeper（i.e.,Ra=1.319 nm,and Rt=2.584 nm）.The removal rate of W7 is lower,the damage layer is removed（i.e.,Ra=0.194 nm,and Rt=0.361 nm）,the surface quality is high,which is suitable for finishing flatness,after removal of 20 μm.The surface roughness of the finished sapphire wafer is better than that of W28.

关 键 词：蓝宝石 碳化硼磨料 移除速率 损伤层 粗糙度 

分 类 号：O786[理学—晶体学]