烧结温度对GZO陶瓷靶材无压烧结致密化的影响  

Effect of Sintering Temperature on Densification of GZO Ceramic Target Prepared by Pressureless Sintered

作　　者：叶林龙 孙宜华 覃远东 方亮 闻望喜 

机构地区：[1]三峡大学材料与化工学院,无机非金属晶态与能源转换材料重点实验室,宜昌443002 [2]广西新未来信息产业股份有限公司,北海536000

出　　处：《中国陶瓷》2018年第2期57-62,共6页China Ceramics

基　　金：透明电极用高性能AZO溅射靶材研制及其产业化应用探索(桂科转1599002-3)

摘　　要：采用模压成型-无压烧结法制备Ga掺杂量为3 wt%的氧化锌陶瓷靶材（ZnO∶Ga_2O_3=97∶3,wt%）。分析研究了烧结温度对靶材致密度、物相组成、微观结构及烧结收缩变化率的影响。结果表明：烧结温度的升高对GZO靶材试样中的Ga元素扩散有促进作用,并且当烧结温度达到1000℃时,试样中经由固相反应生成ZnGa_2O_4尖晶石相,随着烧结温度进一步升高,生成的ZnGa_2O_4尖晶石相会与ZnO继续反应生成化合物Zn_9Ga_2O_（12）。烧结温度为1400℃时靶材致密程度最高,相对密度达90.5%TD（Theoretical Density）。根据试样的受热收缩曲线,制定出GZO靶材的烧结制度,按制度烧结得到的靶材试样相对密度提升至93.54%TD。GZO-3Ga ceramic targets （ZnO ： Ga203=97 ： 3 wt%） were prepared by pressureless sintering. The influences of sintering temperature on the density, crystal structure, microstructure and sintering behavior were investigated. The result suggested that the sintering temperature has a promoting effect on the diffusion of Ga. The spinel phase of ZnGa2O4 was generated by solid phase reaction when the sintering temperature reached 1000℃ and would react with ZnO to generate Zr9Ga2O12 with temperature rising. The highest relative density of 90.5% TD （Theoretical Density） were achieved at 1400℃ by direct heating and the relative density of the specimen sintered by sintering processes based on thermal shrinkage curve was raised to 93.54% TD.

关 键 词：GZO靶材 成型压力 无压烧结 致密化 

分 类 号：TQ174.652[化学工程—陶瓷工业]