GaInP/GaAs/InGaAs倒装三结太阳电池设计与优化  

DESIGN AND OPTIMIZATION OF INVERTED METAMORPHIC GaInP/GaAs/InGaAs TRIPLE JUNCTION SOLAR CELL

作　　者：马大燕[1] 陈诺夫[1] 付蕊[1] 刘虎[1,2] 白一鸣 陈吉堃[3] 

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]石家庄铁道大学数理系,石家庄050041 [3]北京科技大学材料学院,北京100083

出　　处：《太阳能学报》2018年第2期550-557,共8页Acta Energiae Solaris Sinica

基　　金：北京市自然科学基金(2151004)

摘　　要：为获得带隙组合对太阳光谱有效的分割利用，基于细致平衡原理，结合p-n结形成机理，应用Matlab语言对GaInP（1．90eV）／GaAs／InGaAs倒装结构电池体系底电池带隙和各子电池厚度进行模拟优化。结果表明底电池带隙为1．0eV时，光电转换效率最高。通过对GaInP（1．90eV）／GaAs（1．42eV）／InGaAs（1．0eV）倒装结构三结太阳电池各结厚度进行优化，综合考虑材料成本及生产技术等闪素，最佳厚度组合为1．35、2．83和3．19μm时，光电转换效率为44.4％，仅比最高转换效率低0．3％。Based on the p-n junction formation mechanism and meticulous equilibrium condition, the gap ot mverted metamorphic GalnP （1.90 eV）/GaAs/InGaAs battery system and the thickness of each sub-cell were simulated and optimized by using Matlab language. The results showed that the bottom cell band gap of 1.0 eV has the highest conversion efficiency. By optimizing the junction thickness of GaInP （1.90 eV）/GaAs （1.42 eV）/InGaAs （1.0 eV） inverted metamorphic triple junction solar cell and considering the material cost and production technology, the optimal thickness combination is 1.35, 2.83 and 3.19 p.m, the photoelectric conversion efficiency is 44.4%, only 0.3% lower than the maximum conversion efficiency.

关 键 词：太阳电池 细致平衡 P-N结 倒装结构(IMM) 

分 类 号：TM914.4[电气工程—电力电子与电力传动]