Simulation model for electron irradiated IGZO thin film transistors  

作　　者：G K Dayananda C Shantharama Rai A Jayarama Hyun Jae Kim 

机构地区：[1]Department of E&C Engineering, Canara Engineering College, Mangalore 574219, India [2]Department of E&C Engineering, AJIET, Mangalore 575009, India [3]Department of Physics, SCEM, Adyar, Mangalore 575007, India [4]Yonsei University, Seoul 120-749, Republic of Korea

出　　处：《Journal of Semiconductors》2018年第2期17-21,共5页半导体学报（英文版）

摘　　要：An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

关 键 词：simulation model IGZO TFT electron irradiation 

分 类 号：TN321.5[电子电信—物理电子学]