Exploration of photosensitive polyimide as the modification layer in thin film microcircuit  

作　　者：Lily Liu Changbin Song Bin Xue Jing Li Junxi Wang Jinmin Li 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China [3]State Key Laboratory of Solid State Lighting, Chinese Academy of Sciences, Beijing 100083, China [4]Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Journal of Semiconductors》2018年第2期74-77,共4页半导体学报（英文版）

摘　　要：Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

关 键 词：thin film microcircuit photosensitive polyimide silicon dioxide imidization temperature 

分 类 号：TN321.5[电子电信—物理电子学]