The stability of a novel weakly alkaline slurry of copper interconnection CMP for GLSI  

作　　者：Caihong Yao Chenwei Wang Xinhuan Niu Yan Wang Shengjun Tian Zichao Jiang Yuling Liu 

机构地区：[1]School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, China [2]Tianjin Key Laboratory of Electronic Materials and Devices, Tianjin 300130, China

出　　处：《Journal of Semiconductors》2018年第2期78-85,共8页半导体学报（英文版）

基　　金：supported by the Major National Science and Technology Special Projects(No.2016ZX02301003-004-007);the Professional Degree Teaching Case Foundation of Hebei Province,China(No.KCJSZ2017008);the Natural Science Foundation of Hebei Province,China(No.F2015202267);the Natural Science Foundation of Tianjin,China(No.16JCYBJC16100)

摘　　要：Chemical mechanical polishing（CMP） is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of slurry components such as abrasive（colloidal silica）, complexing agent（glycine）, inhibitor（BTA） and oxidizing agent（H_2O_2） on the stability of the novel weakly alkaline slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly alkaline slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine,200 ppm BTA, 20 m L/L H_2O_2 had been selected as the appropriate concentration to prepare copper slurry, and using such slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness（Sq） value with the setting time, it indicates that the working-life of the novel weakly alkaline slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.Chemical mechanical polishing（CMP） is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of slurry components such as abrasive（colloidal silica）, complexing agent（glycine）, inhibitor（BTA） and oxidizing agent（H_2O_2） on the stability of the novel weakly alkaline slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly alkaline slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine,200 ppm BTA, 20 m L/L H_2O_2 had been selected as the appropriate concentration to prepare copper slurry, and using such slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness（Sq） value with the setting time, it indicates that the working-life of the novel weakly alkaline slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.

关 键 词：stability weakly alkaline slurry CMP copper interconnection 

分 类 号：TN405[电子电信—微电子学与固体电子学]