Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation  

作　　者：张梦映 胡志远 毕大炜 戴丽华 张正选 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [2]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Physics B》2018年第2期619-624,共6页中国物理B（英文版）

基　　金：Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147);the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)

摘　　要：Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

关 键 词：partiallydepleted silicon-on-insulator（PD SOI） totalionizingdose（TID） radiationinduced narrow channel effect（RINCE） drain induced barrier lowering（DIBL） effect 

分 类 号：TN386[电子电信—物理电子学]