Si-TiO_2膜的制备及其光生阴极保护性能  

Preparation of Si-TiO_2 Films and Their Properties of Photogenerated Cathodic Protection

作　　者：李春冬 程文华[1,2] 马晓[2] 刘广义[2] 于良民[1] 

机构地区：[1]中国海洋大学化学化工学院,青岛266100 [2]中国船舶重工集团公司第七二五研究所,海洋腐蚀与防护重点实验室,青岛266101

出　　处：《腐蚀与防护》2018年第3期174-177,206,共5页Corrosion & Protection

基　　金：国家自然科学基金(51401185)

摘　　要：采用溶胶凝胶法和浸渍提拉法在304不锈钢(304SS)表面制备了Si-TiO_2薄膜,通过扫描电子显微镜(SEM)、X-射线衍射(XRD)对膜层的形貌和晶型进行了观察,分析了烧结方式、烧结温度、薄膜厚度对Si-TiO_2薄膜性能的影响,并通过紫外可见吸收光谱(UV-Vis)、荧光光谱、光电化学响应曲线研究了Si-TiO_2薄膜的光电响应特性和光生阴极保护性能。结果表明:在500℃条件下采用逐层烧结方式制备的三层Si-TiO_2薄膜具有最佳的光电性能。掺入Si元素增强了TiO_2薄膜对紫外光的吸收,抑制了光生电子-空穴的复合,从而产生更多的光生电子,增强了对基体材料304SS的保护。Si-TiO_2薄膜在紫外光照射下使304SS的电极电位负移至-650mV(SCE),起到了明显的光生阴极保护作用。Si-TiO2 films were fabricated on the surface of 304 stainless steel by sol-gel method and dip coating technology. The morphology and crystalline phase of Si-TiOz films were observed by scanning electron microscopy （SEM） and X-ray diffraction （XRD）. And the effects of sintering method, sintering temperature and film thickness on Si-TiO2 films were analyzed. UV-vis absorption spectroscopy, fluorescence spectroscopy and photoelectrochemical response curve were used respectively to evaluate the photoelectric response characteristics of Si-TiOz film and its performance of photogenerated cathodic protection. The results showed that the three-layer Si-TiOz films prepared by layer-by-layer sintering at 500 ℃ had the best optoelectronic properties. Doping of Si enhanced the absorption intensity of UV light and inhibited the recombination of electron and hole, thus, produced more photoelectrons, which enhanced the protection performance for substrate materials of 304SS. The Si-TiO2 films under UV light illumination made the electrode potential of 304SS shift to -650 mV（SCE）, and provided cathodic protection for 304SS.

关 键 词：溶胶凝胶法 Si-Ti02薄膜 光生阴极保护 

分 类 号：TG174[金属学及工艺—金属表面处理]