Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition  

作　　者：Zhi-Yu Lin Zhi-Bin Chen Jin-Cheng Zhang Sheng-Rui Xu Teng Jiang Jun Luo Li-Xin Guo Yue Hao 林志宇;陈智斌;张进成;许晟瑞;姜腾;罗俊;郭立新;郝跃(Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071;School of Physics and Optoeletronic Engineering,Xidian University,Xi'an 710071)

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071 [2]School of Physics and Optoeletronic Engineering,Xidian University,Xi'an 710071

出　　处：《Chinese Physics Letters》2018年第2期57-60,共4页中国物理快报(英文版)

基　　金：Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100;the China Postdoctoral Science Foundation under Grant No 2015M582610

摘　　要：We investigate the threading dislocation(TD)density in N-polar and Ga-polar GaN films grown on sapphire substrates by metal-organic chemical vapor deposition.X-ray diffraction results reveal that the proportion of screw type TDs in N-polar GaN is much larger and the proportion of edge type TDs is much smaller than that in Ga-polar.Transmission electron microscope results show that the interface between the AlN nucleation layer and the GaN layer in N-polar films is smoother than that in Ga-polar films,which suggests different growth modes of GaN.This observation explains the encountered difference in screw and edge TD density.A model is proposed to explain this phenomenon.

分 类 号：TN304.055[电子电信—物理电子学]