基于硅纳米孔柱阵列的Zn掺杂CdS纳米晶光学特性研究  

Optical property of zinc doped CdS nanocrystal based on silicon nanoporous pillar array

作　　者：张晓丽[1] 刁润丽[1] 李勇[2] 

机构地区：[1]河南质量工程职业学院,平顶山467000 [2]平顶山学院,平顶山467000

出　　处：《化工新型材料》2018年第2期164-167,共4页New Chemical Materials

基　　金：河南省高等学校重点科研项目(15A140012)

摘　　要：利用化学水浴法在硅纳米孔柱陈列(Si-NPA)上沉积了硫化镉(CdS)纳米晶,制得硫化镉/硅纳米孔柱阵列(CdS/Si-NPA)纳米异质结,并对非掺杂和锌(Zn)掺杂CdS/Si-NPA进行表征。研究结果表明:CdS/Si-NPA的结构保持了Si-NPA的规则阵列结构,通过加入一定量的氯化锌,实现了Zn对CdS的掺杂,Zn掺杂后的CdS晶粒大小由约18.1nm减小为约17.6nm,Zn的掺入导致了CdS/Si-NPA的光学带隙由约2.45eV增大到约2.49eV,Zn的掺杂能有效调控CdS带隙。Cadmium sulfide（CdS）nanocrystals were deposited on silicon nanoporous pillar array（Si-NPA）by chemical bath method,the CdS/silicon nanoporous pillar array（CdS/Si-NPA）nano heterojunction was prepared,and the undoped and Zn doped CdS/Si-NPA were characterized.The results showed that the structure of CdS/Si-NPA maintained the regular array structure of Si-NPA,Zn doping into CdS was realized by adding a certain amount of zinc chloride.Furthermore,the results showed also that the crystal size of CdS after Zn doping decreased from about 18.1 nm to 17.6 nm,the incorporation of Zn led to the increase of optical band gap of CdS/Si-NPA from about 2.45 eV to about2.49 eV,and the doping of Zn could effectively regulate the band gap of CdS.

关 键 词：硅纳米孔柱阵列 化学水浴法 Zn掺杂 光致发光谱 

分 类 号：O614.242[理学—无机化学] O734[理学—化学]