Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor  

作　　者：Xiao-Long Li Wu Lu Xin Wang Xin Yu Qi Guo Jing Sun Mo-Han Liu Shuai Yao Xin-Yu Wei Cheng-Fa He 李小龙;陆妩;王信;于新;郭旗;孙静;刘默寒;姚帅;魏昕宇;何承发(Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China [2]Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2018年第3期342-350,共9页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 1630141)

摘　　要：The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.

关 键 词：ionizing radiation damage enhanced low dose rate sensitivity(ELDRS) switched temperature irradiation gate-controlled lateral PNP transistor(GLPNP) 

分 类 号：TN32[电子电信—物理电子学]