一种S波段基于注入锁定技术高效的MOSFET大功率微波源  

An S-Band High Power Microwave Source Based on High Efficiency Injection-Locked MOSFET

作　　者：杨梦琳 刘臻龙 刘长军[1] 

机构地区：[1]四川大学电子信息学院,四川成都610064

出　　处：《真空电子技术》2018年第1期42-44,51,共4页Vacuum Electronics

摘　　要：本文提出了一种利用不平衡耦合谐振器的反馈电路,实现高效率的S波段基于注入锁定技术高效的MOSFET振荡器,在2.45GHz可以获得203 W的输出功率和54.18%的漏极效率,其注入信号为输出信号的1/1000,锁定带宽为2.0MHz。相对于传统的大功率微波源,基于注入锁定技术高效的MOSFET振荡器,工作电压低,相位和频率可控性有明显优势,更有利于实现微波化学实验中的均匀加热以及精确的温度控制。A high efficiency injection-locked MOSFET oscillator using imbalanced coupling resonator in feedback circuit is presented in this paper.An output power of 203 Wand a drainefficiency of 54.18% are obtained at 2.45 GHz,where the injection signal is 1/1000 of the output signal,and the locked bandwidth is 2.0 MHz.Compared with traditional high power microwave sources,the injection-locked MOSFET oscillator has advantages of low operating voltage,well phasecontrol and well frequency control,and is conducive to realize uniform heating and accurate temperature control in microwave chemical experiment.

关 键 词：AB类放大器 注入锁定振荡器 反馈电路 相位控制 

分 类 号：TN752[电子电信—电路与系统]