一种新颖的低温漂高电源抑制比带隙基准源  

A Novel Low Temperature Coefficient High PSRR Bandgap Reference

作　　者：黄宇鹏 邢建力[1] 邢舟 李德华 杨斌杰 

机构地区：[1]厦门大学信息科学与技术学院,福建厦门361005 [2]厦门理挚半导体有限公司,福建厦门361005

出　　处：《微电子学》2018年第1期9-13,共5页Microelectronics

摘　　要：介绍了一种基于0.6μm BiCMOS工艺的高阶曲率补偿、高电源抑制比的带隙基准源。利用三极管电流增益的温度特性来实现低温度系数,并且不需要额外的电路。采用一种新颖的电压预调整器来实现高电源抑制比。结果表明,该带隙基准源在-40℃~120℃内的温度系数为2.83×10^(-6)/℃,在低频、100kHz、1MHz处的电源抑制比分别为-127、-98、-67dB。最低工作电压为1.8V,在1.8~3V电源电压范围内的线性调整率为4×10^(-5)/V,功耗为57μW。A high order curvature compensated and high power supply rejection ratio（PSRR）bandgap reference was designed and implemented in a 0.6μm BiCMOS process.The curvature compensation was achieved by utilizing the temperature characteristics of the bipolar transistor＇s current gainβwithout additional complex circuits.Furthermore,a new voltage pre-regulator was used to improve the PSRR.The proposed bandgap reference featured a temperature coefficient of 2.83×10^-6/℃ at a temperature range from -40 ℃ to 120 ℃,a PSRR of-127 dB,-98 dB,-67 dB at a low frequency,100 kHz,1 MHz respectively,a minimum supply voltage of 1.8 V,a line regulation of 4×10^-5/V from 1.8 Vto 3 Vsupply with a power dissipation of 57μW.

关 键 词：指数曲率补偿 预调整器 电源抑制比 

分 类 号：TN433[电子电信—微电子学与固体电子学]