一种快速瞬态响应的无片外电容型LDO  

A Capacitor-Less LDO with Fast Transient Response

作　　者：高笛 张家豪 明鑫[1,2] 甄少伟 陈萍[3] 张波 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室 [2]电子科技大学广东电子信息工程研究院 [3]中国人民解放军78188部队

出　　处：《微电子学》2018年第1期82-87,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61404020,61404025); 广东省自然科学基金资助项目(2014A030310407)

摘　　要：设计了一种快速瞬态响应的无片外电容型LDO。采用高增益高带宽的超级跨导结构(STC)的误差放大器,利用动态偏置技术与电容耦合技术,极大地增强了摆率。引入额外的快速响应环路,进一步提升了瞬态响应速度。基于0.18μm CMOS工艺进行设计。结果表明,该LDO的最低供电电压为1V,漏失电压仅为200mV,可提供最大100mA的负载电流,能在最大输出电容为100pF、最低负载为50μA的条件下保证电路稳定。负载电流在0.5μs内由50μA跳变至100mA时,LDO输出导致的过冲电压和下冲电压分别为200mV和306mV。A capacitor-less LDO with fast transient response was designed.The super transconductance cell（STC）with the advantages of high gain and high bandwidth was used in the error amplifier（EA）,and the slew rate was enhanced largely through the dynamic biasing technique and capacitive coupling technique.The speed of transient response was also enhanced due to the additional fast response loop.The LDO was designed in a 0.18μm CMOS process with a minimum supply voltage as low as 1 Vand a dropout voltage of only 200 mV,having provided a maximum load current of 100 mA.The loop stability could be ensured while the maximum output capacitance was 100 pF and the minimum load was 50μA.The overshoot and undershoot voltage were 200 mV and 306 mV respectively under a step load change from 50μA to 100 mA within 0.5μs.

关 键 词：无片外电容型LDO 超级跨导结构 快速瞬态响应 

分 类 号：TN432[电子电信—微电子学与固体电子学]