Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition  

作　　者：Li Chen Xinliang Chen Zhongxin Zhou Sheng Guo Ying Zhao Xiaodan Zhang 

机构地区：[1]Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University [2]Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Nankai University [3]Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Nankai University

出　　处：《Journal of Semiconductors》2018年第3期19-24,共6页半导体学报（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707);the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900)

摘　　要：Al doped ZnO（AZO） films deposited on glass substrates through the atomic layer deposition（ALD）technique are investigated with various temperatures from 100 to 250 °C and different Zn ： Al cycle ratios from20 ： 0 to 20 ： 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn ： Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10^（-3）Ω·cm and high optical transmittance deposited at 150 °C with20 ： 2 Zn ： Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.Al doped ZnO（AZO） films deposited on glass substrates through the atomic layer deposition（ALD）technique are investigated with various temperatures from 100 to 250 °C and different Zn ： Al cycle ratios from20 ： 0 to 20 ： 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn ： Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10^（-3）Ω·cm and high optical transmittance deposited at 150 °C with20 ： 2 Zn ： Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application.

关 键 词：AZO films ALD Zn：Al cycle ratio optical and electrical properties 

分 类 号：TN304.21[电子电信—物理电子学]