Pt/Yb2O3/Pt的阻变性质  

Resistive Switching Property of Pt/Yb2O3/Pt

作　　者：张智方 赵霜 方泽波[2] 朱燕艳[1] Zhang Zhifang1,Zhao Shuang1,Fang Zebo2,Zhu Yanyan1(1. Shanghai University of Electric Power, Shanghai 200090, China ;2. Shaoxing University, Shaoxing 312000, Chin)

机构地区：[1]上海电力学院,上海200090 [2]绍兴文理学院,浙江绍兴312000

出　　处：《微纳电子技术》2018年第4期234-238,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(51672172);上海市自然科学基金资助项目(15ZR1418700)

摘　　要：采用电子束蒸发的方法制备了Yb薄膜,对这些样品在不同条件下进行退火,得到Yb2O3薄膜。用热蒸发法在衬底和薄膜表面分别制备了Pt电极,用原子力显微镜（AFM）观察了薄膜的表面形貌,发现随着退火时间延长和退火温度升高,薄膜的表面粗糙度增加。采用电流-电压法研究了Pt/Yb2O3/Pt结构的阻变性质。研究发现,阻变性质与制备薄膜的衬底温度和后期退火温度有直接关系。用不同的电流原理仔细分析电流性质之后发现,制备的薄膜内部有一定的缺陷,出现阻变现象,这些薄膜的缺陷态决定了阻变性质。如果选择合适的条件,Yb2O3可以作为阻变存储器薄膜。The Yb thin films were prepared with the electron beam evaporation method.The samples were annealed at different conditions to obtain Yb2O_3 films.The Pt electrodes were prepared on the substrate and the surface of the film by the thermal evaporation method,respectively.The surface morphology of the film was observed by the atomic force microscopy（AFM）.It is found that the surface roughness of the film increases with the increases of the annealing time and annealing temperature.The resistive switching properties of the Pt/Yb_2O_3/Pt structure were studied by the current-voltage method.The research result shows that the resistive switching property is directly related to the substrate temperature of the film preparation and the later annealing temperature.The properties of the current were carefully analyzed by different current principles.It is found that there are some defects inside the prepared films,which form the phenomenon of resistive switching,and the defect state of these films determines the resistive switching property.If the appropriate conditions are selected,Yb_2O_3 can be used as a resistive switching memory film.

关 键 词：Yb2O3薄膜 阻变存储器(RRAM) 阻变性质 稀土氧化物 电流-电压法 

分 类 号：O485[理学—固体物理]