化学气相沉积法制备六方氮化硼薄膜的研究进展  

The Research Progress on the CVD Synthesis of h-BN film

作　　者：张鑫宇 徐志威 朱家光 徐紫巍[1] Zhang Xinyu, Xu Zhiwei, Zhu Jiaguang, Xu Ziwei(School of Materials Science and Engineering Jiangsu University, Zhenjiang 212013, Chin)

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212000

出　　处：《广东化工》2018年第5期123-124,122,共3页Guangdong Chemical Industry

基　　金：中国博士后科研基金(No.2016M601722);江苏大学科研启动基金(14JDG120);江苏大学大学生科研立项项目(No.15A413)

摘　　要：六方氮化硼(h-BN)最早于20世纪早期被合成得到。由于其具有高熔点,热膨胀系数小,热导率高等优点,20世纪50年代起,世界上开始用各种方法合成获得了六方氮化硼薄膜,并将其广泛应用于工业生产各个领域。本文主要介绍了近年来用化学气相沉积法在不同衬底上制备六方氮化硼薄膜的研究进展,归纳了不同衬底对六方氮化硼薄膜的尺寸、质量、形貌等方面的影响,为实验和理论研究六方氮化硼CVD生长机制提供相应的文献参考。The hexagonal boron nitride （h-BN） was synthesized as early as the beginning of the last century. Due to its unique advantages like high melting point, low expansion coefficient, high thermal conductivity and so on, after the 1950s, various methods have been developed to synthesis the h-BN films, which are widely applied in a variety of industrial fields. In this review, the recent progress of the CVD Synthesis of h-BN film on different substrates is introduced with their influences to the size, quality, and morphology of the as-grown h-BN concluded. This review provides a reference for both the experimental and theoretical studies of the CVD growth ofh-BN film.

关 键 词：六方氮化硼 化学气相沉积法 催化剂衬底 

分 类 号：TQ[化学工程]