Passively mode-locked Er-doped fiber laser based on SnS2 nanosheets as a saturable absorber  被引量:9

Passively mode-locked Er-doped fiber laser based on SnS_2 nanosheets as a saturable absorber

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作  者:KANGDI NIU RuYI SUN QINGYUN CHEN BAOYUAN MAN AND HUANIAN ZHANG 

机构地区:[1]Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China [2]Institute of Data Science and Technology, Shandong Normal University, Jinan 250014, China

出  处:《Photonics Research》2018年第2期72-76,共5页光子学研究(英文版)

基  金:National Natural Science Foundation of China(NSFC)(11474187,61205174,61475089);China Postdoctoral Science Foundation(2016M602177);Natural Science Foundation of Shandong Province,China(ZR2014FM028,ZR2016FP01)

摘  要:In this paper, tin disulfide (SnS2), a two-dimensional (2D) n-type direct bandgap layered metal dichalcogenide with a gap value of 2.24 eV, was employed as a saturable absorber. Its appearance and nonlinear saturable ab- sorption characteristics were also investigated experimentally. SnSz-PVA (polyvinyl alcohol) film was successfully prepared and employed as a mode-locker for achieving a mode-locked Er-doped fiber laser with a pulse width of 623 fs at a pulse repetition rate of 29.33 MHz. The results prove that SnS2 nanosheets will have wide potential ultrafast photonic applications due to their suitable bandgap value and excellent nonlinear saturable absorption characteristics.In this paper, tin disulfide(SnS_2), a two-dimensional(2D) n-type direct bandgap layered metal dichalcogenide with a gap value of 2.24 eV, was employed as a saturable absorber. Its appearance and nonlinear saturable absorption characteristics were also investigated experimentally. SnS_2-PVA(polyvinyl alcohol) film was successfully prepared and employed as a mode-locker for achieving a mode-locked Er-doped fiber laser with a pulse width of 623 fs at a pulse repetition rate of 29.33 MHz. The results prove that SnS_2 nanosheets will have wide potential ultrafast photonic applications due to their suitable bandgap value and excellent nonlinear saturable absorption characteristics.

关 键 词:(160.6000) Semiconductor materials (140.4050) Mode-locked lasers (140.3500) Lasers  erbium. 

分 类 号:TM935.41[电气工程—电力电子与电力传动]

 

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