基于氧化石墨烯可饱和吸收体的低阈值被动调Q锁模Tm,Ho…LiLuF_4激光器  

Passively Q-switched Mode-Locked Low Threshold Tm,Ho…LiLuF_4 Laser with a Graphene Oxide Saturable Absorber

作　　者：令维军[1] 夏涛[1] 董忠[1] 左银艳 李可[1] 刘勍[1] 路飞平[1] 王勇刚[2] Ling Weijun1, Xia Tao1, Dong Zhong1, Zuo Yinyan1, Li Ke1, Liu Qing1, Lu Feiping1, Wang Yonggang2(1 Institute of Laser Technology, Tianshui Normal University, Tianshui, Gansu 741001, China ; 2School of Physics and Information Technology, Shaanxi Normal University, Xi＇an, Shaanxi 710062, Chin)

机构地区：[1]天水师范学院激光技术研究所,甘肃天水741001 [2]陕西师范大学物理学与信息技术学院,陕西西安710062

出　　处：《中国激光》2018年第3期174-179,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(61465012,61564008,11774257,61461046,61665010);国家重点研发计划(2017YFB045200)

摘　　要：利用垂直生长法制备的氧化石墨烯(GO)作为可饱和吸收体,结合特殊设计的低阈值谐振腔,在Tm,Ho…LiLuF_4全固态激光器中实现了低阈值被动调Q锁模运转。出光阈值功率低至73mW,稳定锁模阈值功率为663mW,对应GO可饱和吸收体上功率密度为76.4μJ·cm^(-2)。典型的调Q脉冲包络重复频率为104.2kHz,脉宽约为30μs,包络下锁模脉冲序列的重复频率为178.6 MHz,调制深度接近100%。We demonstrate a stable, low threshold, passive Q-switched mode-locked Tm, Ho∶LiLuF4 solid-state laser with the graphene oxide （GO） prepared by vertical growth method as a saturable absorber and the special designed low threshold resonant cavity. The output power of the laser is as low as 73 mW, the stable mode-locked threshold power is 663 mW, and the corresponding power density of the GO saturable absorber is 76.4 μJ·cm-2. Typical Q-switched pulse envelope has a repetition frequency of 104.2 kHz and a pulse width of 30 μs. The repetition frequency of mode-locked pulse sequence is 178.6 MHz, and the modulation depth is close to 100%.

关 键 词：激光器 低阚值 Tm Ho:LiLuF4激光器 氧化石墨烯 调Q锁模 可饱和吸收体 

分 类 号：TN248.1[电子电信—物理电子学]