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作 者:杨立 李卫民 张佃伟 段冲 Yang Li, Li Weimin, Zhang Dianwei, Duan Chong(Beijing Microelectronics Technology Institute, Beijing 100076, Chin)
机构地区:[1]北京微电子技术研究所
出 处:《半导体技术》2018年第4期260-265,共6页Semiconductor Technology
摘 要:采用0.5μm Ga As工艺设计并制造了一款单片集成驱动放大器的低变频损耗混频器。电路主要包括混频部分、巴伦和驱动放大器3个模块。混频器的射频(RF)、本振(LO)频率为4-7 GHz,中频(IF)带宽为DC-2.5 GHz,芯片变频损耗小于7 dB,本振到射频隔离度大于35 dB,本振到中频隔离度大于27 dB。1 dB压缩点输入功率大于11 dBm,输入三阶交调点大于20 dBm。该混频器单片集成一款驱动放大器,解决了无源混频器要求大本振功率的问题,变频功能由串联二极管环实现,巴伦采用螺旋式结构,在实现超低变频损耗和良好隔离度的同时,保持了较小的芯片面积。整体芯片面积为1.1 mm×1.2 mm。A low conversion loss mixer with monolithic integrated driving amplifier was designed and fabricated with the 0. 5 μm Ga As process. The circuit mainly consisted of three modules: mixing section,balun and driving amplifier. The radio frequency( RF) and local oscillator( LO) frequency of the mixer are 4-7 GHz,the intermediate frequency( IF) bandwidth is DC-2. 5 GHz,and the conversion loss of the chip is less than 7 dB. The isolations from LO to RF and LO to IF are greater than 35 dB and 27 dB,respectively. The input power at 1 dB compression point is better than 11 dBm and the input third-order intercept point is better than 20 dBm. The mixer was integrated with a drive amplifier to solve the problem that the passive mixer requires large LO power. The frequency conversion function of the mixer was realized by a series ring-diode,and the balun employed a spiral structure,maintaining a small chip area while achieving ultra-low conversion loss and good isolation. The overall area of the chip is 1. 1 mm ×1. 2 mm.
关 键 词:双平衡混频器 串联二极管环 螺旋式巴伦 变频损耗 集成驱动放大器
分 类 号:TN403.23[电子电信—微电子学与固体电子学] TN773
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