烧结助剂CuO掺杂对0.97(K0.5Na0.5)NbO3–0.03Bi(Zn2/3Nb1/3)O3陶瓷相结构、微观形貌及电性能的影响  

Effects of CuO Doping on Phase Structure, Microstructure Morphology and Electrical Properties of 0.97(K0.5Na0.5)NbO3–0.03Bi(Zn2/3Nb1/3)O3 Ceramics

作　　者：程花蕾[1,2] 肖健 高鹏[1] 严云云[1] 高拴平[1] 赵立芳[1] CHENG Hualei1,2, XIAO Jian1, GAO Peng1, YAN Yunyun 2, GAO Shuanping 1, ZHAO Lifang1(1. Shaanxi Key Laboratory of Phytochemistry, Department of Chemistry, Baoji University of Arts and Science, Baoji 721013, Shaanxi, China; 2. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi＇an 710072, Chin)

机构地区：[1]陕西省植物重点实验室,宝鸡文理学院化学与化工学院,陕西宝鸡721013 [2]凝固技术国家重点实验室,西北工业大学,西安710072

出　　处：《硅酸盐学报》2018年第3期361-368,共8页Journal of The Chinese Ceramic Society

基　　金：宝鸡文理学院重点项目(ZK15044);陕西省大学生创新创业项目(201610721039);陕西省教育厅专项项目(15JK1021);国家青年科学基金(21501007)

摘　　要：采用传统固相法制备了0.97（K0.5Na0.5）NbO3–0.03Bi（Zn2/3Nb1/3）O3＋x CuO（KNN–3BZN–x Cu）陶瓷,探讨烧结助剂CuO对陶瓷烧结,相结构,微观形貌及电性能的影响规律。结果表明：添加CuO降低了KNN–3BZN–x Cu陶瓷的烧结温度。由于固液传质作用,陶瓷晶粒明显长大,形状发生了改变。添加CuO同时优化了陶瓷的介电性能,提高了弛豫性。KNN–3BZN–0.02Cu陶瓷在150～300℃温度范围内具有优异的电性能：介电常数εr=1 886,容温变化率–15%≤ΔC/C150℃≤15%,介电损耗tgδ〈0.029。同时由于体积密度大,KNN–3BZN–0.02Cu陶瓷具有较高的压电性能：d33=164 p C/N和kp=0.37。Lead-free 0.97（K0.5Na0.5）NbO3-0.03Bi（Zn2/3Nb1/3）O3＋xCuO （abbreviated as KNN-3BZN-xCu） ceramics were synthesized by a conventional mixed oxide method （i.e., the MO method）. The effects of CuO doping amount on the structure and electrical properties of the ceramics were investigated. CuO, as a sintering aid, induces changes in both the microstructure and the electrical properties. The dielectric relaxor behaviors are also enhanced. The KNN-3BZN-0.02Cu ceramics exhibit a high dielectric permittivity （i.e., 1 886） and a small variation （i.e., △C/CI50 ≤4-15%）, and a low dielectric loss （i.e., tgδ ≤0.029） at 150-300 ℃. The KNN-3BZN-0.02Cu ceramics also show the optimum piezoelectric properties （i.e., d33=164 pC/N, and kp=0.37） due to the maximum bulk density.

关 键 词：相结构 微观结构 电性能 铌酸钾钠 氧化铜 

分 类 号：TB34[一般工业技术—材料科学与工程]