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作 者:刘继奎[1] 张可墨 柳青[2] 王松[3] 王斌[1] 国锋[1] LIU Jikui1, ZHANG Kemo1, LIU Qing2, WANG Song3, WANG Bin1, GUO Feng1(1. Beijtug Institute of Control Engineering, Beijtug 100190, China; 2. Lanzhou Institute of Space Technology and Physics, Lanzhou 730000, China; 3.63618 Troops, People's Liberation Army of China, Kuerle 841001, Chin)
机构地区:[1]北京控制工程研究所,北京100190 [2]兰州空间技术物理研究所,兰州730000 [3]中国人民解放军63618部队,库尔勒841001
出 处:《高电压技术》2018年第3期864-869,共6页High Voltage Engineering
基 金:国家重点基础研究发展计划(973计划)(613211)~~
摘 要:太阳帆板驱动机构(solar array drive mechanism,SADM)是长寿命、大功率航天器上负责能源传输的关键部件,对空间充放电效应非常敏感。为检验SADM导电环绝缘介质聚酰亚胺的深层充放电对功率传输性能的影响,提出材料掺杂改性和几何结构优化的方案并进行试验研究。利用电子加速器产生2 Me V高能电子束,对以聚酰亚胺为基体的不同成分掺杂和不同几何构型的试样进行辐照试验,顺次监测试样金属环片接地、恒压和悬浮3种工况下聚酰亚胺挡边的表面充电电位。结果表明,聚酰亚胺挡边高度越高充电越严重,挡边宽度对不同成分掺杂的试样表现出不同的影响规律。对充电影响最显著的是聚酰亚胺掺杂改性后产生的非线性电导特性,通过合理掺杂可以显著缓解深层充电风险并达到抗辐射加固的效果。Solar array drive mechanism(SADM) is a crucial component of the electrical transfer subsystem of long life and large power satellite, which is sensitive to the detrimental effects of internal charging and discharging. In order to test the influence of in-space charging effects on the polyimide dielectric of SADM, we proposed and verified a project to experimentally investigate the impact of impurity and geometry on internal charging and discharging properties of polyimide.An electron accelerator was utilized to carry out 2 Me V electron beams irradiation test on samples of different impurities and structures. The surface charging potential and electrostatic discharge were monitored during three kinds of conditions. It is indicated that the charging potential is positively correlated with the height of polyimide rib. But the influence of width of polyimide rib on the charging potential varies with different impurities. The most significant impact on charging potential is the nonlinear conductivity generated by doping modification of polyimide. In general, proper choice of impurity and design of structure would minimize internal charging and discharging threat to SADM.
关 键 词:太阳帆板驱动机构 电子加速器 电子辐射 聚酰亚胺 掺杂改性 深层充放电
分 类 号:V416[航空宇航科学与技术—航空宇航推进理论与工程]
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