A broadband high-efficiency Doherty power amplifier using symmetrical devices  

作　　者：Zhiqun Cheng Ming Zhang Jiangzhou Li Guohua Liu 

机构地区：[1]Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University

出　　处：《Journal of Semiconductors》2018年第4期72-76,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60123456);the Zhejiang Provincial Natural Science Foundation of China(No.LZ16F010001);the Zhejiang Provincial Public Technology Research Project(No.2016C31070)

摘　　要：This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier （DPA） using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain effi- ciency is achieved at 6-dB back-off power, over the frequency band of 1.9-2.4 GHz.This paper proposes a method for broadband and high-efficiency amplification of Doherty power amplifier （DPA） using symmetric devices. In order to achieve the perfect load modulation, the carrier amplifier output circuit total power length is designed to odd multiple of 90°, and the peak amplifier output total power length is designed to even multiple of 180°. The proposed method is demonstrated by designing a broadband high-efficiency DPA using identical 10-W packaged GaN HEMT devices. Measurement results show that over 51% drain effi- ciency is achieved at 6-dB back-off power, over the frequency band of 1.9-2.4 GHz.

关 键 词：Doherty power amplifier BROADBAND high efficiency symmetric devices 

分 类 号：TN722.75[电子电信—电路与系统]