基于GaN HEMT多倍频程高效率功率放大器设计  

Design of Multi-Octave High-Efficiency Power Amplifier Based on GaN HEMT Device

作　　者：王永贺 文进才 孙玲玲 王龙 吕佳梅 WANG Yong-he, WEN Jin-cai, SUN Ling-ling, WANG Long, LV Jia-mei(Key Laboratory for RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, Chin)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室

出　　处：《微波学报》2018年第2期51-55,共5页Journal of Microwaves

基　　金：国家自然科学基金(61674047,61331006);浙江省自然科学基金(LY16F040004)

摘　　要：使用GaN HEMT功率器件,设计了一款多倍频程高效率功率放大器。利用负载牵引技术分析输入功率、偏置电压、工作频率对功率器件输出阻抗的影响,从而寻找出满足宽带性能的最优阻抗区域;输入、输出匹配网络采用了切比雪夫多节阻抗变换器的综合设计方法,很好地拓展了匹配网络的带宽性能,从而实现了0.8~4.0 GHz（相对带宽133%）多倍频程高效率功率放大器电路。连续波大信号测试结果表明：在0.8~4.0 GHz的频率范围内输出功率为39.5~42.9 d Bm,漏极效率为54.20%~73.73%,增益为9.4~12.0 d B。在中心频率2.4 GHz未利用线性化技术的情况下使用5 MHz WCDMA调制信号测试得到邻近信道泄漏比（ACLR）为-27.2 d Bc。设计的工作频率能够覆盖目前主要的无线通信系统GSM900M、WCDMA、DCS1800 LTE、PCS1900 LTE、3.5GHz WiMAX以及下一代移动通信系统（5G）等。This paper presents a multi-octave broadband high-efficiency power amplifier using GaN HEMT device. The optimal impedance regions of the active device was found by loadpull simulation. The Chebyshev multi-section matching transformers are employed to design input and output matching networks with extended bandwidth,thus achieving multi-octave broadband high-efficiency power amplifier at the frequency band of 0.8 ~ 4.0 GHz（ 133% fractional bandwidth）. High-efficiency wideband power amplifier is designed and experimented,the measured results show a drain efficiency（ DE） of54.20% ~ 73.73% with an output power of 39.5 ~ 42.9 d Bm and the gain of 9.4 ~ 12 d B. For a 5 MHz WCDMA signal,the adjacent channel leakage ratio of the power amplifier reaches-27. 2 d Bc without digital pre-distortion at center frequency 2. 4 GHz. The frequency range of this paper covers modern wireless communication systems like GSM900 M,WCDMA,DCS1800 LTE,PCS1900 LTE,3.5 GHz Wi MAX and 5 G etc.

关 键 词：GaN高电子迁移率晶体管(HEMT) 多倍频程 高效率 功率放大器 5G 

分 类 号：TN722.75[电子电信—电路与系统]