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作 者:张兴涛[1] 吴广宁[1] 杨雁[1] 吴旭辉[1] 俞孝峰 钟鑫[1] 朱健[1] ZHANG Xingtao;WU Guangning;YANG Yan;WU Xuhui;YU Xiaofeng;ZHONG Xin;ZHU Jian(College of Electrical Engineering, Southwest Jiaotong University, Chengdu 610031, China)
出 处:《高压电器》2018年第4期164-169,176,共7页High Voltage Apparatus
基 金:国家自然科学基金(51177136);国家杰出青年基金(51325704)~~
摘 要:为了研究无机纳米粒子掺杂对聚酰亚胺(polyimide,PI)绝缘性能影响,文中利用原位聚合法制备了PI、10%(质量百分数)的PI/SiO_2膜和PI/Al_2O_3膜,测试了其电导率(表面、体积电导率)、热失重(TGA)以及击穿场强,并得到了方波脉冲电压下耐电晕时间随温度的变化曲线。结果表明:PI/SiO_2膜、PI/Al_2O_3膜、PI膜的电导率依次降低,而击穿场强则相反;当失重5%时,PI/Al_2O_3膜和PI/SiO_2膜的热分解温度比纯PI膜分别高了17.5℃和11℃。随着温度的升高,3种薄膜的耐电晕时间都在减小,且2种纳米膜的耐电晕时间都高于纯PI膜;当温度小于210℃时,由于PI/SiO_2膜的电导率最高,所以其耐电晕时间最长;当温度大于210℃时,由于PI/Al_2O_3膜的热导率最高以及热稳定性最好,所以其耐电晕时间最长。无机纳米粒子引入的有机—无机界面以及纳米粒子的高热稳定性是影响PI膜绝缘性能的主要原因。研究为变频电机的匝间绝缘水平的提高提供了理论依据。In order to study the effect of inorganic nano filler on the insulating properties of polyimide (PI) films, PI thin film, 10 wt. % PI/SiO2 thin film and 10 wt.% PI/Al2O3 thin film were made based on in situ polymerization meth- od. The conductivity, thermal gravimetric analysis (TGA) and breakdown field strength are tested. Besides, the curve of corona resistant time along with the change of temperature is gained. The results indicate that the conductivi- ty decreases in the sequence of PI/SiO2 film, PI/Al2O3 film, and PI film, but the breakdown field strength is on the contrary. When the decomposition temperature at 5% weight loss, the temperature of PI/Al2O3 film and PI/SiO2 film is higher than that of pure PI film by 17.5 ℃ and 11 ℃ respectively. With the increase of temperature, the corona resis- tance time of three kinds of fihns is decreased, and the time of two nano films is higher than that of the pure PI film. When the temperature is less than 210 ℃, the corona resistance time of PI/SiO2 film is the longest because its con- ductivity is the highest. When the temperature is greater than 210 ℃, the corona resistance time of PI/Al2O3 film is the longest because of the highest thermal conductivity and thermal stability. The organic inorganic interface and high thermal stability of inorganic nano particles arc the main reasons for the insulation properties of PI films. The study provides a theoretical basis for the improvement of the turn to turn insulation level of the frequency conversion motor.
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