单根Ni/NiO核壳纳米线器件的光电特性  

Photoelectric Properties of a Single Ni/NiO Core-Shell Nanowire Device

作　　者：相文峰[1] 刘义 胡明皓 陈少华[1] 赵嵩卿[1,2] Xiang Wenfeng;Liu Yi;Hu Minghao;Chert Shaohua;Zhao Songqing(Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum- Beijing, Beijing 102249, China;Faculty of Art and Science, China University of Petroleum-Beijing at Karamay, Karamay 834000, China)

机构地区：[1]中国石油大学(北京)油气光学探测技术北京市重点实验室,北京102249 [2]中国石油大学(北京)克拉玛依校区文理学院,新疆克拉玛依834000

出　　处：《微纳电子技术》2018年第5期312-314,332,共4页Micronanoelectronic Technology

基　　金：北京市自然科学基金资助项目(4142047);中国石油大学(北京)优秀青年教师研究项目(2462015YQ0603);中国石油大学(北京)克拉玛依校区启动基金资助项目(RCYJ2016B-3-004)

摘　　要：利用化学还原法制备了Ni纳米线后经过高温氧化得到了Ni/NiO核壳纳米线,最后利用半导体工艺制备出单根Ni/NiO核壳纳米线器件,并对其光电特性进行了测试分析。I-V曲线测试结果表明器件具有很好的整流特性。在-1 V外加偏压下,暗电流为1.6μA,光电流为15μA,光电流约是暗电流的10倍。在波长为248 nm、功率密度为40 mW/cm2的脉冲光照射下,器件的最大光生电压约为23 mV,响应时间约为1μs。通过曲线拟合发现器件的恢复时间由两部分组成,分别为3.3和25μs。器件的恢复时间远长于响应时间,这可能是由于Ni/NiO核壳纳米线中大量的缺陷阻碍了光生电子和空穴之间的复合所致。The Ni nanowires were prepared by the chemical reduction method,and then the Ni/NiO core-shell nanowires were obtained by high temperature oxidation.Finally,the single Ni/NiO core-shell nanowire device was fabricated by the semiconductor process,and the photoelectric characteristics of the single Ni/NiO core-shell nanowire device were measured and analyzed.The I-Vcurves test results show that the device has good rectification properties.At-1 V bias voltage,the dark current and photocurrent are 1.6 and 15μA,respectively.The photocurrent is about 10 times of the dark current.Under the laser pulse irradiation with a wavelength of 248 nm and a power density of 40 mW/cm2,the maximum photovoltage of the device is about 23 mV with the responding time is about 1μs.The fitting curve shows that the first recovery time and the second recovery time of the device are 3.3 and 25μs,respectively.It is obviously found that the recovery time is much longer than the responding time,which is possibly induced by lots of defects in the Ni/NiO core-shell nanowire hindering the recombination between the photo-induced electrons and holes.

关 键 词：Ni/NiO核壳纳米线 光电特性 整流特性 响应时间 恢复时间 

分 类 号：TB383[一般工业技术—材料科学与工程]