一种基于SOI技术的MEMS电容式压力传感器  

MEMS Capacitive Pressure Sensor Based on the SOI Technique

作　　者：卞玉民[1] 杨拥军[1] Bian Yumin;Yang Yongjun(The 13th Research Institute, CETC, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所

出　　处：《微纳电子技术》2018年第5期345-350,共6页Micronanoelectronic Technology

摘　　要：利用绝缘体上硅（SOI）技术研制了一种可以用于飞行高度测量、气象环境监测和医疗等领域的高精度微电子机械系统（MEMS）电容式压力传感器。利用有限元分析软件对传感器敏感结构进行了结构建模、静力和模态仿真分析。敏感结构为敏感电容和参考电容差动输出形式,可以有效减小温度漂移和重力误差对压力测量准确度的影响。比较了无岛和有岛两种敏感膜的性能差异。为了提高传感器性能,利用成熟的MEMS加工工艺制作了SOI敏感电容极板,并利用硅-硅键合工艺实现了真空腔体。传感器采用标准塑封封装后,采用高低温压力测量系统进行了性能测试。测试结果表明,传感器量程达到30-120 kPa,非线性0.04%-0.09%,分辨率1 Pa。A high-accuracy micro-electromechanical system（MEMS）capacitive pressure sensor was developed utilizing the silicon-on-insulator（SOI）technology for the flight altitude measurement,meteorological environment monitoring and medical industry.The structural modeling,static force and modal simulation and analysis were carried out by the finite element analysis software.The sensing structure consists of a sensing capacitor and a reference capacitor with the differential output form,thus the effects of the temperature drift and gravity error on the accuracy of the pressure measure can be reduced effectively.The performances of two sensing films with island and without island were compared.The SOI sensing capacitive plate was fabricated based on the mature MEMS technology to improve the sensor performance,and a vacuum chamber was made by the silicon-silicon bonding technique.The performances of the sensor chip packaged by plastic packaging were tested with the high and low temperature pressure measure system.The test results show that the sensor is of 30-120 kPa full measure range,0.04%-0.09% nonlinearity and 1 Pa resolution.

关 键 词：微电子机械系统(MEMS) 电容式压力传感器 高精度 绝缘体上硅(SOI) 硅-硅键合 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TH703[自动化与计算机技术—控制科学与工程]