热压制备AlxBi0.5Sb（1.5-x）Te3热电材料的热电性能研究  

Research on Thermoelectric Properties of AlxBi0.5Sb（1.5-x）Te3 Thermoelectric Materials Fabricated by Hot Pressing

作　　者：江跃珍[1] 况菁 李雪纯 胡孔刚[2] 段兴凯[2] JIANG Yuezhen;KUANG Jing;LI Xuechun;HU Konggang;DUAN Xingkai(School of Electronic Engineering, Jiujiang University, Jiujiang 332005, China;School of Mechanical and Materials Engineering, Jiujiang University, Jiujiang 332005, China)

机构地区：[1]九江学院电子工程学院,江西九江332005 [2]九江学院机械与材料工程学院,江西九江332005

出　　处：《热加工工艺》2018年第6期67-69,共3页Hot Working Technology

基　　金：国家自然科学基金资助项目(51161009)

摘　　要：采用真空熔炼和热压烧结技术制备了Al掺杂P型Bi0.5Sb1.5Te3热电材料。样品的物相结构和形貌分别采用X射线衍射（XRD）和扫描电镜（SEM）进行表征。结果表明,AlxBi0.5Sb（1.5-x）Te3Te3（x=0,0.04,0.08,0.12）块体材料的XRD图谱与Bi0.5Sb1.5Te3的XRD图谱对应一致。该复合材料的组织致密,且层状结构特征明显。Al部分替代Sb后,优化了载流子浓度,从而提高了材料的电导率。在室温附近所有掺杂样品的热导率都低于Bi0.5Sb1.5Te3样品的热导率,从而有效改善了材料的热电性能。其中,AlxBi0.5Sb（1.5-x）Te3Te3（x=0.04）在室温附近表现了最低的热导率,320 K时获得最大ZT值（为1.0）。Al-doping P-type Bi0.5Sb1.5Te3 thermoelectric materials were fabricated by vacuum melting and hot pressing sintering technology. The phase structure and morphology of the samples were characterized by X-ray diffraction （XRD） and scanning electron microscope （SEM）, respectively. The results show that the XRD patterns of bulk AlxBi0.5Sb（1.5-x）Te3 （x=0, 0.04, 0.08, 0.12） are in line with these of Bi0.5Sb1,5Te3. The mierostructure of the composite is compact, and the characteristic of laminated structure is obvious. The cartier concentration of Bi0.5Sb1,5Te3 improves by partial substituting Sb with A1, and then, the electrical conductivity of the material increases. The thermal conductivities of all the doped samples are lower than these of Bi0.5Sb1,5Te3 near room temperature, and then, the thermoelectric performance of the material improves effectively. Among all the samples,AlxBi0.5Sb（1.5-x）Te3（x=0.04） sample shows the lowest thermal conductivity near room temperature and the maximum ZT value reaches 1.0 at 320 K.

关 键 词：热压 显微结构 掺杂 电导率 热导率 

分 类 号：TB34[一般工业技术—材料科学与工程]