Optical properties and applications for MoS_2-Sb_2Te_3-MoS_2 heterostructure materials  

作　　者：WENJUN LIU YA-NAN ZHU MENGLI LIU BO WEN SHAOBO FANG HAO TENG MING LEI LI-MIN LIU ZHIYI WEI 

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications,School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Beijing Computational Science Research Center,Beijing 100193,China [4]School of Physics and Nuclear Energy Engineering,Beihang University,Beijing 100083,China

出　　处：《Photonics Research》2018年第3期220-227,共8页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(NSFC)(11674036);Beijing University of Posts and Telecommunications(BUPT)(IPOC2016ZT04,IPOC2017ZZ05);Beijing Youth Top-Notch Talent Support Program(2017000026833ZK08);Special Program for Applied Research on Super Computation of the NSFC Guangdong Joint Fund(U1501501);XAFS Station(BL14W1)

摘　　要：Two-dimensional(2D) materials with potential applications in photonic and optoelectronic devices have attracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials' optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are synthesized with van der Waals heterostructures consisting of MoS_2 and Sb_2Te_3. The bandgap, carrier mobility, and carrier concentration of the MoS_2-Sb_2Te_3-MoS_2 heterostructure materials are calculated theoretically. By using these materials as saturable absorbers(SAs), applications in fiber lasers with Q-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17%and 14.13 J∕cm^2, respectively. Both theoretical and experimental results indicate that MoS_2-Sb_2Te_3-MoS_2 heterostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The MoS_2-Sb_2Te_3-MoS_2 heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.Two-dimensional （2D） materials with potential applications in photonic and optoelectronic devices have at- tracted increasing attention due to their unique structures and captivating properties. However, generation of stable high-energy ultrashort pulses requires further boosting of these materials＇ optical properties, such as higher damage threshold and larger modulation depth. Here we investigate a new type of heterostructure material with uniformity by employing the magnetron sputtering technique. Heterostructure materials are syn- thesized with van der Waals heterostructures consisting of MoS2 and Sb2T%. The bandgap, carrier mobility, and carrier concentration of the MoS2-Sb2Te3-MoS2 heterostructure materials are calculated theoretically. By using these materials as saturable absorbers （SAs）, applications in fiber lasers with Q-switching and mode-locking states are demonstrated experimentally. The modulation depth and damage threshold of SAs are measured to be 64.17% and 14.13 J/cm2, respectively. Both theoretical and experimental results indicate that MoS2-SbeTe3-MoS2 het- erostructure materials have large modulation depth, and can resist high power during the generation of ultrashort pulses. The MoS2-SbeTe3-MoS2 heterostructure materials have the advantages of low cost, high reliability, and suitability for mass production, and provide a promising solution for the development of 2D-material-based devices with desirable electronic and optoelectronic properties.

关 键 词：Mo SB Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials Te EDF 

分 类 号：TN[电子电信]