Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions  

作　　者：Wei Mao Hai-Yong Wang Peng-Hao Shi Xiao-Fei Wang Ming Du Xue-Feng Zheng Chong Wang Xiao-Hua Ma Jin-Cheng Zhang Yue Hao 毛维;王海永;石朋毫;王晓飞;杜鸣;郑雪峰;王冲;马晓华;张进成;郝跃(Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University;School of Microelectronics,Xi'an Jiaotong University)

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇ an 710071, China [2]School of Microelectronics, Xi＇ an Jiaotong University, Xi＇an 710049, China

出　　处：《Chinese Physics B》2018年第4期426-431,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61474091,and 61574110);the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012)

摘　　要：A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA） at no expense of breakdown voltage（BV）.The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions（un-SJ HFET）.A physically intrinsic mechanism for the nonuniform doping superjunction（non-SJ） to further reduce RonA at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in RonA could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the Ga N-based vertical HFETs.A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA） at no expense of breakdown voltage（BV）.The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions（un-SJ HFET）.A physically intrinsic mechanism for the nonuniform doping superjunction（non-SJ） to further reduce RonA at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in RonA could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the Ga N-based vertical HFETs.

关 键 词：GaN-based vertical HFETs nonuniform doping superjunctions minimized specific on-resistance breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]