Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs  

作　　者：Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen 刘婷婷;张凯;朱广润;周建军;孔月婵;郁鑫鑫;陈堂胜(Research Institution,China Electronic Equipment & System Engineering Company;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute)

机构地区：[1]Research Institution, China Electronic Equipment ＆ System Engineering Company, Beijing 100039, China [2]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

出　　处：《Chinese Physics B》2018年第4期432-436,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61504125,61474101,and 61505181)

摘　　要：We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.

关 键 词：AlGaN/GaNFinFETs output power density linearity characteristics 

分 类 号：TN386[电子电信—物理电子学]