Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate  

作　　者：Bin Zhao Wei Hu Xian-Sheng Tang Wen-Xue Huo Li-Li Han Ming-Long Zhao Zi-Guang Ma Wen-Xin Wang Hai-Qiang Jia Hong Chen 赵斌;胡巍;唐先胜;霍雯雪;韩丽丽;赵明龙;马紫光;王文新;贾海强;陈弘(Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区：[1]Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Physics B》2018年第4期491-496,共6页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400603);the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)

摘　　要：We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.We report a type of thin film Al Ga In P red light emitting diode（RLED） on a metallic substrate by electroplating copper（Cu） to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power（LOP） by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm^2 and 35 A/cm^2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types.

关 键 词：light emitting diodes thin film ELECTROPLATING substrate transferred process 

分 类 号：TN312.8[电子电信—物理电子学] TN31